transistors 1 2sD1992A silicon npn epitaxial planer type for general amplification complementary to 2sb1321a features ? low collector to emitter saturation voltage v ce(sat) ? allowing supply with the radial taping absolute maximum ratings t a = 25 c parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 7v peak collector current i cp 1a collector current i c 500 ma collector power dissipation p c 600 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c parameter symbol conditions min typ max unit collector cutoff current i cbo v cb = 20 v, i e = 0 0.1 a i ceo v ce = 20 v, i b = 01 a collector to base voltage v cbo i c = 10 a, i e = 060v collector to emitter voltage v ceo i c = 2 ma, i b = 050v emitter to base voltage v ebo i e = 10 a, i c = 07v forward current transfer ratio h fe1 * 2 v ce = 10 v, i c = 10 ma 85 340 h fe2 * 1 v ce = 10 v, i c = 500 ma 40 90 collector to emitter saturation voltage * 1 v ce(sat) i c = 300 ma, i b = 30 ma 0.35 0.6 v transition frequency f t v cb = 10 v, i e = ? 10 ma, f = 200 mhz 200 mhz collector output capacitance c ob v cb = 10 v, i e = 0 , f = 1 mhz 6 15 pf electrical characteristics t a = 25 c 3 c unit: mm 6.9 0.1 1.05 0.05 2.5 0.1 3.5 0.1 14.5 0.5 (1.45) 0.8 0.7 4.0 0.15 0.85 0.8 1.0 0.65 max. 0.45 + 0.1 ? 0.05 0.45 + 0.1 ? 0.05 2.5 0.5 2.5 0.5 2.5 0.1 123 1.2 0.1 0.65 max. 0.45 0.1 0.05 + ? (hw type) note) in addition to the lead type shown in the upper figure, the type as shown in the lower figure is also available. 1: emitter 2: collector 3: base mt1 type package rank q r s no-rank h fe1 85 to 170 120 to 240 170 to 340 85 to 340 note) * 1: pulse measurement * 2: rank classification product of no-rank is not classified and have no indication for rank.
2sD1992A transistors 2 p c ? t a i c ? v ce i c ? i b v ce(sat) ? i c v be(sat) ? i c h fe ? i c f t ? i e c ob ? v cb v cer ? r be 0 0 160 40 120 80 140 20 100 60 200 600 400 800 100 500 300 700 ambient temperature t a ( c ) collector power dissipation p c ( mw ) 020 48 16 12 18 26 14 10 0 800 700 600 500 400 300 200 100 i b = 10 ma 9 ma 8 ma 7 ma 6 ma 5 ma 4 ma 3 ma 2 ma 1 ma collector to emitter voltage v ce ( v ) collector current i c ( ma ) t a = 25 c 010 8 6 4 29 7 5 3 1 0 800 700 600 500 400 300 200 100 base current i b ( ma ) v ce = 10 v t a = 25 c collector current i c ( ma ) 0.01 0.01 0.1 1 10 100 0.1 1 10 0.03 0.3 3 30 0.03 0.3 3 collector to emitter saturation voltage v ce(sat) ( v ) collector current i c ( a ) i c / i b = 10 25 c ? 25 c t a = 75 c 0.01 0.01 0.03 0.1 1 10 0.03 0.3 3 30 100 0.1 0.3 1 3 10 base to emitter saturation voltage v be(sat) ( v ) collector current i c ( a ) i c / i b = 10 t a = 75 c 25 c ? 25 c 0 0.01 300 250 200 150 100 50 0.1 1 10 0.03 0.3 3 forward current transfer ratio h fe v ce = 10 v collector current i c ( a ) t a = 75 c 25 c ? 25 c ? 1 ? 3 ? 10 ? 30 ? 100 0 240 200 160 120 80 40 ? 2 ? 20 ? 5 ? 50 transition frequency f t ( mhz ) emitter current i e ( ma ) v cb = 10 v t a = 25 c 0 1 12 10 8 6 4 2 3 10 30 100 220 550 collector output capacitance c ob ( pf ) collector to base voltage v cb ( v ) i e = 0 f = 1 mhz t a = 25 c 1 3 10 30 100 300 1000 0 120 100 80 60 40 20 collector to emitter voltage v cer ( v ) base to emitter resistance r be ( k ? ) i c = 2 ma t a = 25 c
transistors 2sD1992A 3 i ceo ? t a 1 10 10 2 10 3 10 4 0 200 160 120 80 40 180 140 100 60 20 v ce = 10 v ambient temperature t a ( c ) i ceo ( t a ) i ceo ( t a = 25 c )
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